aug-30-2002 1 BCM856S vps05604 6 3 1 5 4 2 pnp silicon af transistor array precision matched transistor pair: i c 10% for current mirror applications low collector-emitter saturation voltage two (galvanic) internal isolated transistors complementary type: bcm846s eha07175 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package BCM856S 3ms 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sot363 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 65 v collector-emitter voltage v ces 80 collector-base voltage v cbo 80 emitter-base voltage v ebo 5 collector current i c 100 ma peak collector current i cm 200 total power dissipation- t s = 115 c p tot 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 140 k/w 1 for calculation of r thja please refer to application note thermal resistance
aug-30-2002 2 BCM856S electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 a v (br)ceo 65 - - v collector-base breakdown voltage i c = 10 a, i e = 0 a v (br)cbo 80 - - collector-emitter breakdown voltage i c = 10 a, v be = 0 a v (br)ces 80 - - emitter-base breakdown voltage i e = 10 a, i c = 0 a v (br)ebo 5 - - collector-base cutoff current v cb = 30 v, i e = 0 a v cb = 30 v, i e = 0 a, t a = 150 c i cbo - - - - 15 5 na dc current gain- 1) i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v h fe - 200 250 290 - 450 - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 90 250 300 650 mv base emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - mv mv base-emitter voltage- 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 600 - 650 - 750 820 matching i b = 1 a, v ce1 = v ce2 = 1.0v i b = 100 a, v ce1 = v ce2 = 1.0v i c -10 -10 - - 10 10 % 1 puls test: t < 300s; d < 2%
aug-30-2002 3 BCM856S electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 8 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h 11e - 4.5 - k open-circuit reverse voltage transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e - 2 - 10 -4 short-circuit forward current transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e - 330 - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s noise figure i c = 200 a, v ce = 5 v, f = 1 khz, f = 200 hz , r s = 2 k f - - 10 db
aug-30-2002 4 BCM856S total power dissipation p tot = ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot collector-base capacitance c cb = ( v cb0 ) emitter-base capacitance c eb = ( v eb0 ) 0 4 10 5 10 10 ehp00376 v cb0 c eb0 v 6 2 eb0 v ebo c 8 10 pf 12 cb0 c -1 0 1 c cbo ( ( ) bc 856...860 ) permissible pulse load r thjs = ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
aug-30-2002 5 BCM856S transition frequency f t = ( i c ) v ce = 5 v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c base-emitter saturation voltage i c = ( v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c collector-emitter saturation voltage i c = ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c collector current i c = ( v be ) v ce = parameter 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 vbe -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 a ic 1v ta=25c 1v ta=-50c ta=100c 5v 5v 1v 5v
aug-30-2002 6 BCM856S dc current gain h fe = ( i c ) v ce = 5v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c collector cutoff current i cbo = ( t a ) v cbo = 30 v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c output characteristics i c = ( v ce ), i b = parameter 0 1 2 3 v 5 vce 0 1 2 3 4 5 6 7 8 9 10 11 12 ma 15 ic ib = 4a ib = 8a ib = 12a ib = 16a ib = 20a ib = 24a ib = 28a ib =32a ib = 36a ib = 40a
aug-30-2002 7 BCM856S definition of matching i c = ( i c2 - i c1 )/ i c1
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